一种高功率宽带氮化镓功放设计

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中图分类号：TN722-34 文献标识码：A 文章编号：1004-373X（2026）06-0024-06

DOI：10.16652/j.issn.1004-373x.2026.06.004

Designof high power wide-bandGaNpoweramplifier

HUANGChen’，SANGLei¹，WANGWentao'，CHENQiang² （1.School of Microelectronics，Hefei Universityof Technology，Hefei 23oooo，China; 2.SchoolofIntegatedCircuitandEnginering，NanjingUniversityofPostsandTelecommunications，Nanjing，China）

Abstract：Asanimportantcomponentof microwavesystems，improving keyindicators such as bandwidth，output power， andeffciencyhasalwaysbeenthegoalandmajorchallengeinthedesignof poweramplifiers.Onthisbasis，basedon CGH40025Fgalliumnitride（GaN）transistordevelopedbyCREECompany，ahighoutputpowerwide-bandamplifierisdesigned. TheChebyshevimpedanceconverterisintroduced todesigntheinput-output matching circuit，which makesabalancebetween theoutputpower，bandwidthandpoweradditionaleficiencyoftheamplifier，avoidstheshortcomingsof theperformaneidex， andrealizesamore balancedwide-bandpoweramplifier.Thetesting resultsshowthattheoperating frequencyrangeof the designedpoweramplifierisfrom1GHzto2.5GHz，andtherelativebandwidthis85.7%.Inthisoperatingfrequencyband，the gainof hepoweramplifieris greaterthan1OdB，thesaturationoutputpoweris greaterthan42dBm，andthepoweradditional efficiency isgreater than 50% ：

Keywords：power amplifier;Gallum nitride;high power; Chebyshev impedance transformation;performance equalization; power added efficiency

0 引言

随着雷达探测、卫星通信等领域的高速发展，微波系统对高功率、宽频带、高效率的需求日益提高。（剩余5536字）