晶硅异质结光伏技术中透明导电氧化物靶材的研究进展与挑战

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中图分类号：TM914.4 文献标志码：A

文章编号：2096-2983（2026）01-0054-10

Abstract： Crystaline silicon heterojunction （HJT） cells， recognized as third-generation photovoltaic technology， overcome the effciency limitations of PERC and TOPCon through low-temperature process compatibility， high open-circuit voltage， and superior temperature coefficients. Their efficiency ceiling andindustrialization process rely critically on multifunctional coordination within transparent conductive oxide （TCO） layers. High-mobility sputtering targets optimized via conduction band dispersion have enabled efficiency breakthroughs， while indium scarcity drives indium-free TCO development. Industrially， physical vapor deposition （PVD） dominates manufacturing due to high deposition rates and localized equipment， whereas reactive plasma deposition （RPD） achieves higher mobility through low-energy particle-induced lattice matching but faces constraints from imported equipment costs and low target utilization. Future advancements demand precise laboratory-toproduction mapping of target properties， with roll-to-roll （R2R） processintegration and perovskite/silicon tandem spectral synergy poised to propel HJT-based high-efficiency， low-carbon photovoltaic industrialization.

Keywords： crystalline silicon heterojunction cell; transparent conductive oxide thin film; sputring target

晶硅异质结（heterojunction，HJT）电池作为第三代高效光伏技术的代表，凭借其低温工艺兼容性、高开路电压及优异的温度系数，正逐步颠覆传统钝化发射极和背面电池（passivatedemitterand rearcell，PERC）与隧穿氧化层钝化接触（tunneloxidepassivated contact， TOPCon）电池技术的市场格局[1-3]其核心优势源于非晶硅/晶体硅（amorphoussilicon/crystallinesilicon heterojunction，a-Si/c-Si）HJT结构的创新设计：通过低于 200°C 的低温制造，规避了高温工艺导致的晶格畸变与热损伤，利用氢钝化非晶硅层将界面悬挂键密度控制在 1010/cm2 量级，显著抑制载流子复合，使少子寿命延长至5ms 以上[4-5]这一特性不仅支撑硅片厚度减薄至 120～130μm （材料损耗减少 15%～20% ，还通过双面对称结构与低温应力释放机制，实现薄片化硅片的机械良率超 98% 。（剩余18412字）